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TIP47/48/49/50 NPN SILICON TRANSISTOR
HIGH VOLTAGE AND SWITCHING
APPLICATIONS TO-220
HIGH SUSTAINING VOLTAGE
(VCEO(sus): 250 to 400V)
1A RATED COLLECTOR CURRENT
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Emitter Voltage :TIP47 VCBO 350 V
:TIP48 400 V
:TIP49 450 V
:TIP50 500 V
Collector Emitter Voltage : TIP47 VCEO 250 V 1.Base 2.Collector 3.Emitter
:TIP48 300 V
:TIP49 350 V
:TIP50 400 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 1 A
Collector Current (Pulse) IC 2 A
Base Current IB 0.6 A
&)
Collector Dissipation ( T C=25 PC 40 W
Collector Dissipation ( T =25&) PC 2 W
&
A
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150 &
ELECTRICAL CHARACTERISTICS (T C =25&)
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage VCEX(sus)
IC = 30mA, IB = 0 250 V
: TIP47 300 V
: TIP48 350 V
: TIP49 400 V
Collector Cutoff Current : TIP50 ICEO VCE = 150V, IB = 0 1 mA
: TIP47 VCE = 200V, IB = 0 1 mA
: TIP48 VCE = 250V, IB = 0 1 mA
: TIP49 VCE = 300V, IB = 0 1 mA
Collector Cutoff Current : TIP50 ICEX VCE = 350V, VBE = 0 1 mA
: TIP47 VCE = 400V, VBE = 0 1 mA
: TIP48 VCE = 450V, VBE = 0 1 mA
: TIP49 VCE = 500V, VBE = 0 1 mA
Emitter Cutoff Current : TIP50 IEBO VEB = 5V, IC = 0 1 mA
*DC Current Gain hFE VCE = 10V, IC = 0.3A 30 150
VCE = 10V, IC = 1A 10
*Collector Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.2A 1 V
*Base Emitter Saturation Voltage VBE(on) VCE = 10V, IC = 1A 1.5 V
Current Gain Bandwidth Product fT VCE =10V, IC = 0.2A, f = 1KHz 10 MHz
Turn On Time tON VCC = 400V 0.5 uS
Storage Time tSTG 5IB1 = -2.5IB2 = IC = 6A 3 uS
Fall Time tF RL = 66.7