stb60ne03l.pdf part of ST stb60ne03l stb60ne03l.pdf, . Electronic Components Datasheets Active components Transistors ST stb60ne03l.pdf text manual preview

Text preview for : stb60ne03l.pdf part of ST stb60ne03l . Electronic Components Datasheets Active components Transistors ST stb60ne03l.pdf

Back to : stb60ne03l.pdf | Home

STB60NE03L-10
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
T YPE V DSS R DS(o n) ID
ST B60NE03L-10 30 V < 0.010 60 A
s TYPICAL RDS(on) = 0.007
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION 3
1
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
D2PAK
DESCRIPTION TO-263
This Power Mosfet is the latest development of (suffix "T4")
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark- INTERNAL SCHEMATIC DIAGRAM
able manufacturing reproducibility.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 30 V
V DGR Drain- gate Voltage (R GS = 20 k) 30 V
V GS Gate-source Voltage