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BFU610F
NPN wideband silicon RF transistor
Rev. 2 -- 11 January 2011 Product data sheet

1. Product profile

1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.

1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 1.7 dB at 5.8 GHz
High associated gain 13.5 dB at 5.8 GHz
40 GHz fT silicon technology

1.3 Applications
Low current battery equipped applications
Low noise amplifiers for microwave communications systems
Analog/digital cordless applications
RKE
AMR
GPS
ZigBee
LTE, cellular, UMTS
FM radio
Mobile TV
Bluetooth
NXP Semiconductors BFU610F
NPN wideband silicon RF transistor

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCBO collector-base voltage open emitter - - 16 V
VCEO collector-emitter voltage open base - - 5.5 V
VEBO emitter-base voltage open collector - - 2.5 V
IC collector current - 2 10 mA
Ptot total power dissipation Tsp 90