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SEMICONDUCTOR KTC9011
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
B C
FEATURE
High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
MAXIMUM RATING (Ta=25 )
J
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
G 0.85
Collector-Base Voltage VCBO 35 V H 0.45
H J _
14.00 + 0.50
Collector-Emitter Voltage VCEO 30 V F F K 0.55 MAX
L 2.30
Emitter-Base Voltage VEBO 5 V M 0.45 MAX
N 1.00
C
1 2 3
IC
L
Collector Current 50 mA
M
1. EMITTER
Emitter Current IE -50 mA 2. BASE
3. COLLECTOR
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=5V, IC=1mA 40 - 198
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.4 V
Transition Frequency fT VCB=10V, IC=1mA, f=100MHz 100 - 400 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 - pF
Note : hFE Classification E:40 59, F:54 80, G:72 108, H:97 146, I:132 198
1994. 5. 11 Revision No : 0 1/1