php50n06_1.pdf part of Philips php50n06 1 php50n06_1.pdf, . Electronic Components Datasheets Active components Transistors Philips php50n06

Text preview for : php50n06_1.pdf part of Philips php50n06 1 . Electronic Components Datasheets Active components Transistors Philips php50n06_1.pdf

Back to : php50n06_1.pdf | Home

Philips Semiconductors Product specification

PowerMOS transistor PHP50N06

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope. VDS Drain-source voltage 60 V
The device is intended for use in ID Drain current (DC) 52 A
Switched Mode Power Supplies Ptot Total power dissipation 150 W
(SMPS), motor control, welding, Tj Junction temperature 175