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Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUT12AI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited
for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V
VCEO Collector-emitter voltage (open base) - 450 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 20 A
Ptot Total power dissipation Ths 25