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STS15N4LLF5
N-channel 40 V, 0.00625 , 15 A, SO-8
STripFETTM Power MOSFET

Features
Type VDSS RDS(on) max. ID

STS15N4LLF5 40 V < 0.0076 15 A


Optimal RDS(on)x Qg trade-off @ 4.5 V
Conduction losses reduced
Switching losses reduced
SO-8

Applications
Switching application

Description
This STripFETTMV Power MOSFET technology is Figure 1. Internal schematic diagram
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit (FOM).




Table 1. Device summary
Order code Marking Package Packaging

STS15N4LLF5 15C4L SO-8 Tape and reel




April 2010 Doc ID 17339 Rev 1 1/12
www.st.com 12
Contents STS15N4LLF5


Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11




2/12 Doc ID 17339 Rev 1
STS15N4LLF5 Electrical ratings


1 Electrical ratings

Table 2. Absolute maximim ratings
Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 40 V
VGS Gate-source voltage