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STK12N05L
STK12N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID
STK12N05L 50 V < 0.15 12 A
STK12N06L 60 V < 0.15 12 A

s TYPICAL RDS(on) = 0.115
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
3
s REPETITIVE AVALANCHE DATA AT 100oC 2
1
s LOW GATE CHARGE 3
2
1
s LOGIC LEVEL COMPATIBLE INPUT
s 175oC OPERATING TEMPERATURE FOR
STANDARD PACKAGE SOT-82 SOT-194
s APPLICATION ORIENTED (option)
CHARACTERIZATION

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS INTERNAL SCHEMATIC DIAGRAM
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STK12N05L STK12N06L
VD S Drain-source Voltage (V GS = 0) 50 60 V
V DG R Drain- gate Voltage (R GS = 20 k) 50 60 V
V GS Gate-source Voltage