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PBSS5140T
40 V, 1 A PNP low VCEsat BISS transistor
Rev. 04 -- 29 July 2008 Product data sheet

1. Product profile

1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4140T.

1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation

1.3 Applications
I General-purpose switching and muting
I LCD backlighting
I Supply line switching circuits
I Battery-driven equipment (mobile phones, video cameras and handheld devices)

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -40 V
IC collector current - - -1 A
ICM peak collector current single pulse; - - -2 A
tp 1 ms
RCEsat collector-emitter IC = -500 mA; [1] - 300 < 500 m
saturation resistance IB = -50 mA

[1] Pulse test: tp 300