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SEMICONDUCTOR KTA1279
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
B C
A
MAXIMUM RATING (Ta=25 )
N DIM MILLIMETERS
CHARACTERISTIC SYMBOL RATING UNIT E A 4.70 MAX
K
G B 4.80 MAX
Collector-Base Voltage VCBO -300 V D C 3.70 MAX
D 0.45
J
Collector-Emitter Voltage VCEO -300 V E 1.00
F 1.27
Emitter-Base Voltage VEBO -5.0 V G 0.85
H 0.45
H J _
14.00 + 0.50
Collector Current IC -500 mA
F F K 0.55 MAX
L 2.30
Emitter Current IE 500 mA M 0.45 MAX
N 1.00
Collector Power Dissipation PC 625 mW 1 2 3
C
L
M
Junction Temperature Tj 150 1. EMITTER
2. COLLECTOR
Storage Temperature Tstg -55 150 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current V(BR)CBO IC=-100 A, IE=0 -300 - - V
Emitter Cut-off Current V(BR)CEO IC=-1.0mA, IB=0 -300 - - V
IC=-1.0mA, VCE=-10V 25 - -
DC Current Gain hFE * IC=-10mA, VCE=-10V 40 - -
IC=-30mA, VCE=-10V 25 - -
Collector-Emitter Saturation Voltage VCE(sat) * IC=-20mA, IB=-2.0mA - - -0.5 V
Base-Emitter Saturation Voltage VBE(sat) * IC=-20mA, IB=-2.0mA - - -0.9 V
Transition Frequency fT VCE=-20V, IC=-10mA, f=100MHz 50 - - MHz
Collector Output Capacitance Cob VCB=-20V, IE=0, f=1MHz - - 6.0 pF
Note :* Pulse test : PW 300 S, Duty Cycle 2%
2005. 8. 30 Revision No : 1 1/2
KTA1279
h FE - I C fT - IC
300 100
TRANSITION FREQUENCY f T (MHz)
VCE =10VDC
DC CURRENT GAIN h FE
T j =125 C
50
100 T j =25 C
T j =-55 C 30
50
30
T j =25 C
VCE =20VDC
10 0
-1 -3 -5 -10 -30 -50 -100 -1 -3 -5 -10 -30 -50 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
C ob - V R I C - V CE
COLLECTOR OUTPUT CAPACITANCE
100
BONDING WIRE LIMITATION
SECOND BREAK DOWN
50 LIMITATION T j =150 C
C ib
30 -500
COLLECTOR CURRENT I C (mA)
100