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2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev. 02 -- 29 July 2010 Product data sheet

1. Product profile

1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

1.2 Features and benefits
AEC-Q101 qualified Trench MOSFET technology
Logic-level compatible Very fast switching

1.3 Applications
High-speed line driver Relay driver
Low-side loadswitch Switching circuits

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source Tamb = 25