Text preview for : buld3p5t4.pdf part of ST buld3p5t4 . Electronic Components Datasheets Active components Transistors ST buld3p5t4.pdf
Back to : buld3p5t4.pdf | Home
BULD3P5T4
Medium voltage fast-switching PNP Power Transistor
General features
Medium voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
In compliance with the 2002/93/EC European 3
Directive 1
Description DPAK
t( s)
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
d uc
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
P ro
Internal schematic diagram
te
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
le
so
The device is expressly designed for a new
solution to be used in compact fluorescent lamps,
Ob
H.F. ballast voltage FED where it is coupled with
the BULD3N7T4, its complementary NPN
transistor. -
Applications
ct (s)
du
Electronic ballast for fluorescent lighting
o
e Pr
let
so
Order codes
b
O Part Number
BULD3P5T4
Marking
BULD3P5
Package
DPAK
Packing
Tape & Reel
June 2006 Rev 1 1/10
www.st.com 10
BULD3P5T4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
t( s)
d uc
P ro
le te
so
- Ob
ct (s)
o du
e Pr
o let
O bs
2/10
BULD3P5T4 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (V BE = 0) -500 V
VCEO Collector-emitter voltage (IB = 0) -400 V
Emitter-base voltage
VEBO V(BR)EBO V
(IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150