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SEMICONDUCTOR KF1N60L
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
B D
This planar stripe MOSFET has better characteristics, such as fast DIM MILLIMETERS
A 7.20 MAX
switching time, low on resistance, low gate charge and excellent B 5.20 MAX
A
C 0.60 MAX
avalanche characteristics. It is mainly suitable for switching mode P
DEPTH:0.2 D 2.50 MAX
E 1.15 MAX
power supplies. F 1.27
C
G
S G 1.70 MAX
Q H 0.55 MAX
K J _
14.00 + 0.50
J
K 0.35 MIN
FEATURES
R
L _
0.75 + 0.10
F F
VDSS= 600V, ID= 0.5A M 4
N 25
RDS(ON)=10 (Max) @VGS = 10V H H H O 1.25
P 1.50
Qg(typ) = 4.0nC M E M
Q 0.10 MAX
R _
12.50 + 0.50
D
1 2 3 L S 1.00
O
H
N N
1. EMITTER
MAXIMUM RATING (Tc=25 ) 2. COLLECTOR
3. BASE
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 600 V
TO-92L
Gate-Source Voltage VGSS 30 V
TC=25 0.5
ID
Drain Current TC=100 0.31 A
Pulsed (Note1) IDP 2.0
Single Pulsed Avalanche Energy EAS 45 mJ
(Note 2)
PIN CONNECTION
Repetitive Avalanche Energy EAR 1.3 mJ
(Note 1)
Peak Diode Recovery dv/dt D
dv/dt 4.5 V/ns
(Note 3)
TC=25 5.4 W
Drain Power
Derate above 25 PD 0.043 W/
Dissipation
G
Ta=25 1 W
Maximum Junction Temperature Tj 150 S
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 23 /W
Thermal Resistance, Junction-to-
RthJA 125 /W
Ambient
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KF1N60L
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.24A - 8.0 10.0
Dynamic
Total Gate Charge Qg - 4.0 -
VDS=480V, ID=1A
Gate-Source Charge Qgs - 0.7 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.3 -
Turn-on Delay time td(on) - 10 -
VDD=300V
Turn-on Rise time tr - 10 -
ID=1A ns
Turn-off Delay time td(off) - 15 -
RG=25 (Note4,5)
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 150 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 20 - pF
Reverse Transfer Capacitance Crss - 3 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 0.7
VGS Pulsed Source Current ISP - - 2.8
Diode Forward Voltage VSD IS=0.47A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=1A, VGS=0V, - 200 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ - 0.4 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=83mH, IS=1A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 1A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
001
2
KF1N60
L
1 PRODUCT NAME
2 LOT NO
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KF1N60L
24
20
16
12
8
4
0.5 1 1.5 2 2.5
0.175A
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KF1N60L
Fig 7. C - VDS Fig8. Qg- VGS
1000 12
ID=1A
Gate - Source Voltage VGS (V)
10
Ciss
Capacitance (pF)
100 8
6
Coss VDS = 480V
10 4
Crss
2
1 0
0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
1
10us
0.8
100us
1ms 0.6
10ms
0.4
0.2
DC
2013. 1. 14 Revision No : 0 4/7
KF1N60L
[RthJC]
102
101 0.50
0.20
0.10
100 0.05
0.02
0.01
Single
10-1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
[RthJA]
103
102
0.50
0.20
101 0.10
0.05
0.02
100 0.01
Single
10-1 -5
10 10-4 10-3 10-2 10-1 100 101 102 103
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KF1N60L
2013. 1. 14 Revision No : 0 6/7
KF1N60L
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