irlsz24a.pdf part of Samsung irlsz24a irlsz24a.pdf, . Electronic Components Datasheets Active components Transistors Samsung irlsz24a.pdf text manual preview

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Advanced Power MOSFET IRLSZ24A
FEATURES
BVDSS = 60 V
Logic Level Gate Drive
Avalanche Rugged Technology
RDS(on) = 0.075
Rugged Gate Oxide Technology ID = 14 A
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
TO-220F
Lower Leakage Current : 10