Text preview for : cem4282.pdf part of CET cem4282 . Electronic Components Datasheets Active components Transistors CET cem4282.pdf
Back to : cem4282.pdf | Home
CEM4282
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
5
40V, 6.6A, RDS(ON) = 36m @VGS = 10V.
RDS(ON) = 48m @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D D D D
Lead free product is acquired. 8 7 6 5
Surface mount Package.
SO-8
1 2 3 4
1 S S S G
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS