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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2727AF

GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1700 V
VCEO Collector-emitter voltage (open base) - 825 V
IC Collector current (DC) - 12 A
ICM Collector current peak value - 30 A
Ptot Total power dissipation Ths 25