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TIP31A/31B/31C TIP32A/32B/32C
COMPLEMENTARY SILICON POWER TRANSISTORS
s
TIP31A, TIP31C, TIP32A,TIP32B, AND TIP32C ARE SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The TIP31A, TIP31B and TIP31C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are TIP32A, TIP32B and TIP32C. TO-220
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INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T s tg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ase 25 C Tamb 25 o C Storage T emperature Max. Operating Junction T emperature
o
Valu e T IP31A T IP32A 60 60 TIP31B TIP32B 80 80 5 3 5 1 40 2 -65 to 150 150 T IP31C T IP32C 100 100
Unit
V V V A A A W W
o o
C C
For PNP types voltage and current values are negative.
October 1995
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TIP31A/TIP31B/TIP31C/TIP32A/TIP32B/TIP32C
THERMAL DATA
R thj -ca se R thj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l I CBO Parameter Collector Cut-off Current (I B = 0) T est Con ditio ns for TIP31A/32A V CE = 30 V for TIP31B/31C/32B/32C V CB = 60 V for T IP31A/32A for T IP31B/32B for TIP31C/32C V EB = 5 V I C = 30 mA for T IP31A/32A for T IP31B/32B for T IP31C/32C IC = 3 A IC = 3 A IC = 1 A IC = 3 A I C = 0.5 A f = 1 KHz I C = 0.5 A f = 1 MHz I B = 375 mA V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V 20 V CE = 10 V 3 25 10 V CE = 60 V V CE = 80 V V CE = 100 V Min . T yp. Max. 0.3 0.3 0.2 0.2 0.2 1 Unit mA mA mA mA mA mA
I CES
Collector Cut-off Current (V BE = 0) Emitter Cut- off Current (I C = 0)
I EBO
V CEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat )* V BE(on) * h FE* h fe Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain
60 80 100 1.2 1.8 50
V V V V V
Pulsed: Pulse duration = 300 µs, duty cycle 2 % For PNP types voltage and current values are negative.
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TIP31A/TIP31B/TIP31C/TIP32A/TIP32B/TIP32C
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
E
mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
A
C
D1
L2 F1
D
G1
Dia. F2 F
L5 L7 L6
L9
L4
G
H2
P011C
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TIP31A/TIP31B/TIP31C/TIP32A/TIP32B/TIP32C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No s license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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