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RTQ020N03
Transistors

2.5V Drive Nch MOS FET
RTQ020N03

Structure External dimensions (Unit : mm)
Silicon N-channel MOS FET TSMT6

1.0MAX
2.9
1.9 0.85
Features 0.95 0.95 0.7
(6)
1) Low On-resistance. (5) (4)

2) Space saving, small surface mount package (TSMT6).

1.6
2.8
0~0.1
3) Low voltage drive (2.5V drive).

0.3~0.6
(1) (2) (3)

1pin mark
0.4 0.16

Each lead has same dimensions
Applications Abbreviated symbol : QS
Switching

Packaging specifications Inner circuit
(6) (5) (4)
Package Taping
Type Code TR
Basic ordering unit (pieces) 3000 2
RTQ020N03

1

(1) Drain
(2) Drain
(3) Gate
(1) (2) (3) (4) Source
1 ESD PROTECTION DIODE (5) Drain
2 BODY DIODE (6) Drain

Absolute maximum ratings (Ta=25