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2SC2712
SOT-23 Transistor(NPN)
1. BASE SOT-23
2. EMITTER
3. COLLECTOR
Features
Low Noise: NF=1 dB (Typ),10dB(MAX)
Complementary to 2SA1162
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB= 60 V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE VCE=6V, IC=2mA 70 700
Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB=10mA 0.1 0.25 V
Transition frequency fT VCE=10V, IC= 1mA 80 MHz
Output capacitance Cob VCB=10V, IE=0,f=1 MHz 2.0 3.5 pF
VCE=6V,IC=0.1mA,f=1kHz,
Noise Figure NF 1.0 10 dB
Rg=10k
CLASSIFICATION OF hFE
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
Marking LO LY LG LL
2SC2712
SOT-23 Transistor(NPN)
Typical Characteristics
2SC2712
SOT-23 Transistor(NPN)