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SEMICONDUCTOR KRC660E~KRC664E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B

B1
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design. 1 5 DIM MILLIMETERS

C
A _
1.6 + 0.05
Reduce a Quantity of Parts and Manufacturing Process.

A1
A
A1 _
1.0 + 0.05
2

C
High Packing Density. B _
1.6 + 0.05
B1 _
1.2+ 0.05

D
3 4 C 0.50
D _
0.2 + 0.05
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) _
H 0.5 + 0.05
_
0.12 + 0.05
C 5 4 P P J
P 5

R1

H
Q1 Q2
B

J
1. Q 1 IN (BASE)
2. Q 1, Q 2 COMMON (EMITTER)
3. Q 2 IN (BASE)
E 1 2 3
4. Q 2 OUT (COLLECTOR)
5. Q 1 OUT (COLLECTOR)

TESV
MAXIMUM RATING (Ta=25