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NJT4030P
Bipolar Power Transistors
PNP Silicon
Features
Collector --Emitter Sustaining Voltage -- http://onsemi.com
VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain - -
hFE = 200 (Min) @ IC = 1.0 Adc PNP TRANSISTOR
= 100 (Min) @ IC = 3.0 Adc 3.0 AMPERES
Low Collector -
-Emitter Saturation Voltage -
- 40 VOLTS, 2.0 WATTS
VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc
= 0.500 Vdc (Max) @ IC = 3.0 Adc
SOT--223 Surface Mount Packaging C 2,4
Epoxy Meets UL 94, V- @ 0.125 in
-0
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant B1 E3
Schematic
MARKING
DIAGRAM
SOT-
-223
AYW
CASE 318E
4030PG
STYLE 1
1
A = Assembly Location
Y Year
W = Work Week
4030P = Specific Device Code
G = Pb--Free Package
PIN ASSIGNMENT
4
C
B C E
1 2 3
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
September, 2010 - Rev. 1
- NJT4030P/D
NJT4030P
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Symbol Value Unit
Collector--Emitter Voltage VCEO 40 Vdc
Collector--Base Voltage VCB 40 Vdc
Emitter--Base Voltage VEB 6.0 Vdc
Base Current -- Continuous IB 1.0 Adc
Collector Current -- Continuous IC 3.0 Adc
Collector Current -- Peak 5.0
Total Power Dissipation PD W
Total PD @ TA = 25C mounted on 1" sq. (645 sq. mm) Collector pad on FR--4 bd material 2.0
Total PD @ TA = 25C mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR--4 bd material 0.80
Operating and Storage Junction Temperature Range TJ, Tstg