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Philips Semiconductors Product specification

PowerMOS transistor BUK9120-48TC
Voltage clamped logic level FET
with temperature sensing diodes

GENERAL DESCRIPTION QUICK REFERENCE DATA
Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT
mode logic level field-effect power
transistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 45 55 V
suitable for surface mounting. Using ID Drain current (DC) 52 A
'trench' technology the device Ptot Total power dissipation 116 W
features very low on-state resistance Tj Junction temperature 175