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Philips Semiconductors Product specification
PowerMOS transistor BUK109-50GS
TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected power MOSFET
in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V
envelope, intended as a general ID Continuous drain current 29 A
purpose switch for automotive PD Total power dissipation 75 W
systems and other applications. Tj Continuous junction temperature 150