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M8050

TRANSISTOR(NPN)
SOT-23

FEATURES
Power dissipation

1. BASE
2. EMITTER
MARKING: Y11
3. COLLECTOR

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.8 A
PC Collector Power Dissipation 0.2 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V
Collector cut-off current ICBO VCB= 35V, IE=0 0.1 A
Collector cut-off current ICEO VCE= 20V, IB=0 0.1 A
hFE(1) VCE=1V, IC=5mA 45
DC current gain hFE(2) VCE=1V, IC=100mA 80 300
hFE3 VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
Transition frequency fT VCE=6V, IC= 20mA , f=30MHz 150 MHz

* Pulse Test : pulse width 300