Text preview for : pmbta44.pdf part of Philips pmbta44 . Electronic Components Datasheets Active components Transistors Philips pmbta44.pdf
Back to : pmbta44.pdf | Home
PMBTA44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 01 -- 22 February 2008 Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Low current (max. 300 mA)
I High voltage (max. 400 V)
I AEC-Q101 qualified
1.3 Applications
I LED driver for LED chain module
I LCD backlighting
I High Intensity Discharge (HID) front lighting
I Automotive motor management
I Hook switch for wired telecom
I Switch mode power supply
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 400 V
IC collector current - - 300 mA
hFE DC current gain VCE = 10 V; IC = 10 mA 50 - 200
NXP Semiconductors PMBTA44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 base
3 3
2 emitter
3 collector 1
1 2
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PMBTA44 - plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PMBTA44 W3*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMBTA44_1