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STB60NE06-16
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET

TYPE V DSS R DS(on) ID
STB60NE06-1 60 V < 0.016 60 A

s TYPICAL RDS(on) = 0.013
s EXCEPTIONAL dV/dt CAPABILTY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s HIGH dV/dt CAPABILITY 3
1
s APPLICATION ORIENTED
CHARACTERIZATION D2PAK
s FOR THROUGH-HOLE VERSION CONTACT
TO-263
SALES OFFICE
(Suffix "T4")
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique " Single Feature SizeTM "
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and INTERNAL SCHEMATIC DIAGRAM
less critical alignment steps therefore a remark-
able manufacturing reproducibility.

APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 60 V
VDGR Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage