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SEMICONDUCTOR KTK921U
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
RF Switching for VCR/DVD/Set Top Box Tuner
FEATURES
Low loss at on state(Typ 1dB@1GHz) E
M B M
With built-in bias diode
Gate 3.3V operating 1 4 D DIM MILLIMETERS
A _
2.00 + 0.20
_
A
B 1.25 + 0.15
J
C _
0.90 + 0.10
2 3 D 0.3+0.10/-0.05
E _
2.10 + 0.20
H 0.15+0.1/-0.06
J 1.30
K 0.00 ~ 0.10
C
H L 0.70
L
M 0.42
N N N 0.10 MIN
K
1. Diode Cathode
2. FET Gate & Diode Anode
3. FET Drain
4. FET Source
FET Maximum Ratings (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
USQ
Drain-Source-Voltage VDS 3 V
Drain-Gate-Voltage VDG 7 V EQUIVALENT CIRCUIT
Source-Gate-Voltage VSG 7 V 4(S) 3(D)
Drain Current ID 10 mA
DIODE Maximum Ratings (Ta=25 )
1(C) 2(G,A)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage VR 35 V
Forword Current IF 100 mA Marking
4 3
Lot No.
Type Name
FET DIODE Maximum Ratings (Ta=25 ) MC
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation PC 200 mW 1 2
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
2010. 2. 17 Revision No : 0 1/2
KTK921U
FET ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate-Source Breakdown Voltage V(BR)GSS VDS=0, IGS=-0.1mA -7 - - V
Gate-Source Pinch-off Voltage VGS(OFF) VDS=1V, ID=20 A - -1.9 -2.5 V
Drain-Source Leakage Current IDSX VDS=2V, VGS=-3.3V - - 10 A
Gate Cut-off Current IGSS VDS=0, VGS=-3.3V - - -100 nA
Drain-Source On-State Resistance RDS(ON) VGS=0, ID=1mA - 20 25
VSC=VDC=0, RS=RL=50 , IF=0, f 1GHz - - -2.5 dB
Loss(On-State) Note1 S21(ON) 2 VSC=VDC=0, RS=RL=50 , IF=0, f=1GHz - -1.3 - dB
VSC=VDC=0, RS=RL=75 , IF=0, f 1GHz - - -3.5 dB
VSC=VDC=3.3V, RS=RL=50 , IF=1mA, f 1GHz -30 - - dB
Isolation (Off-State) Note1 S21(OFF) 2 VSC=VDC=3.3V, RS=RL=50 , IF=1mA, f= 1GHz - -38 - dB
VSC=VDC=3.3V, RS=RL=75 , IF=1mA, f 1GHz -30 - - dB
VSC=VDC=5V, IF=1mA, f=1MHz - 1 - pF
Input Capacitance Note2 Cic
VSC=VDC=0, IF=0, f=1MHz - 0.65 - pF
VSC=VDC=5V, IF=1mA, f=1MHz - 1 - pF
Output Capacitance Note2 Coc
VSC=VDC=0, IF=0, f=1MHz - 0.65 - pF
Note : 1 IF=Diode Forward Current
2 Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc;
DIODE ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Forward Voltage VF IF=2mA - - 0.85 V
Reverse Current IR VR=15V - - 0.1
Reverse Voltage VR IR=1 35 - - V
Total Capacitance CT VR=6V, f=1MHz - 0.7 1.2 pF
Series Resistance rS IF=2mA, f=100MHz - 0.5 0.9
Fig. S21(on) 2 S21(off) 2
Test Circuit
V 1nF
100k
On-State : V=0V
Off-State : V=3.3V
47k
50 50
Input Output
1nF 1nF
4.7k
100k
1nF
V
2010. 2. 17 Revision No : 0 2/2