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Philips Semiconductors Product specification

TrenchMOSTM transistor PHB130N03LT
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 30 V
mounting using 'trench' technology. ID Drain current (DC)1 75 A
The device features very low on-state Ptot Total power dissipation 187 W
resistance and has integral zener Tj Junction temperature 175