ceu630n_ced630n.pdf part of CET ceu630n ced630n ceu630n_ced630n.pdf, . Electronic Components Datasheets Active components Transistors CET ceu630n

Text preview for : ceu630n_ced630n.pdf part of CET ceu630n ced630n . Electronic Components Datasheets Active components Transistors CET ceu630n_ced630n.pdf

Back to : ceu630n_ced630n.pdf | Home

CED630N/CEU630N
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

200V, 7.5A, RDS(ON) = 0.36 @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired. D

TO-251 & TO-252 package.

D G

G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK) S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS