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SEMICONDUCTOR KTX212E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B
B1
FEATURES
Including two devices in TES6.
1 6 DIM MILLIMETERS
C
(Thin Extreme Super mini type with 6 leads.) A _
1.6 + 0.05
A1
A
A1 _
1.0 + 0.05
With Built-in bias resistors. 2 5 _
C
B 1.6 + 0.05
Simplify circuit design. B1 _
1.2 + 0.05
D
3 4 C 0.50
Reduce a quantity of parts and manufacturing process. D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
P P
EQUIVALENT CIRCUIT P 5
Q1 C Q2 OUT
H
J
R1 Q2
IN 1. Q1 (EMITTER)
B 2. Q1 (BASE)
R1=2.2K 3. Q2 OUT (COLLECTOR)
R2=2.2K 4. Q2 COMMON (EMITTER)
R2 5. Q2 IN (BASE)
6. Q1 (COLLECTOR)
E COMMON
EQUIVALENT CIRCUIT (TOP VIEW) TES6
6 5 4
Marking
6 5 4
Lot No.
Q1
BG
Q2
Type Name
1 2 3
1 2 3
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
IC 500
Collector Current
ICP * 1
* Single pulse Pw=1mS.
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage VO 50 V
Input Voltage VI 12, -10 V
Output Current IO 100
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation PD * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.
2008. 9. 23 Revision No : 1 1/4
KTX212E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IE=10 A 15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A 6 - - V
DC Current Gain hFE VCE=2V, IC=10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA - 90 250 mV
Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz - 320 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.5 - pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current IO(OFF) VO=50V, VI=0 - - 500
DC Current Gain GI VO=5V, IO=20 20 - -
Output Voltage VO(ON) IO=10 , II=0.5 - 0.1 0.3 V
Input Voltage (ON) VI(ON) VO=0.3V, IO=20 - 1.83 3 V
Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1 0.5 1.15 - V
Transition Frequency fT * VO=10V, IO=5 - 250 -
Input Current II VI=5V - - 3.8
Note : * Characteristic of Transistor Only.
2008. 9. 23 Revision No : 1 2/4
KTX212E
Q 1 (NPN TRANSISTOR)
h FE - I C VCE(sat) - I C
1K 1K
COLLECTOR-EMITTER SATURATION
Ta=125 C IC /IB =20
500
500 Ta=25 C 300
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (mV)
300 Ta=-40 C
100
50
100 30 C
125
Ta= C C
50 25 0
10 Ta= Ta=-4
30 5
3
VCE =2V
10 1
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
1K
COLLECTOR-EMITTER SATURATION
10K
Ta=25 C IC /IB =20
500
BASE-EMITTER SATURATION
300 5K
VOLTAGE VCE(sat) (mV)
VOLTAGE VBE(sat) (mV)
3K
100
50
30 1K Ta=-40 C
I C /IB =50
10 I C /I B =20 500 Ta=25 C 5 C
I C/I B =
10 Ta=12
5 300
3
1 100
1 3 10 30 100 300 1K 1 3 10 30 100 300 1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
I C - V BE fT - IC
1K 1K
TRANSITION FREQUENCY f T (MHz)
VCE =2V VCE =2V
COLLECTOR CURRENT I C (mA)
500 Ta=25 C
300 500
300
100
50
25 C
5 C
40 C
30 100
Ta=2
Ta=1
Ta=-
10 50
5 30
3
1 10
0 0.5 1.0 1.5 1 3 10 30 100 300 1K
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA)
2008. 9. 23 Revision No : 1 3/4
KTX212E
Q 1 (NPN TRANSISTOR)
Cob - VCB , C ib - VEB
Pc - Ta
COLLECTOR OUTPUT CAPACITANCE C ob (PF)
1K
COLLECTOR LPOWER DISSIPATION PC (mW)
COLLECTOR INPUT CAPACITANCE C ib (PF)
I E =0A
500 f=1MHz 250
Ta=25 C
300
200
100
50 150
30
C ib
100
10
C ob
5 50
3
0
0 25 50 75 100 125 150
1
0.1 0.3 1 3 10 30 100
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)
I O - V I(ON) I O - V I(OFF)
Q2 Q2
100 3k
50
OUTPUT CURRENT I O (