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Philips Semiconductors Product Specification

PowerMOS transistor BUK556-60A
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
logic level field-effect power
transistor in a plastic envelope. VDS Drain-source voltage 60 V
The device is intended for use in ID Drain current (DC) 50 A
Switched Mode Power Supplies Ptot Total power dissipation 150 W
(SMPS), motor control, welding, RDS(ON) Drain-source on-state resistance 26 m
DC/DC and AC/DC converters, and VGS = 5 V
in automotive and general purpose
switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION d
tab

1 gate
2 drain
g
3 source
tab drain
1 23 s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 60 V
VDGR Drain-gate voltage RGS = 20 k - 60 V