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MJD31B/31C
MJD32B/32C

COMPLEMENTARY SILICON POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s ELECTRICAL SIMILAR TO TIP31B/C AND
TIP32B/C

APPLICATIONS 3
s GENERAL PURPOSE SWITCHING AND 1
AMPLIFIER TRANSISTORS

DESCRIPTION
s The MJD31B and MJD31C and the MJD32B DPAK
and MJD32C form complementary NPN-PNP TO-252
pairs. They are manufactured using Epitaxial (Suffix "T4")
Base technology for cost-effective
performance.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
MJD31B/32B MJD31C/32C
V CBO Collector-Base Voltage (IE = 0) 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 3 A
I CM Collector Peak Current 5 A
IB Base Current 1 A
o
P t ot Total Dissipation at T c = 25 C 15 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C

June 1997 1/5
MJD31B/31C - MJD32B/32C

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 8.33 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 100 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I Ces Collector Cut-off V CB = Max Rating 20