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PZTA14
SOT-223 Transistor(NPN)
1. BASE SOT-223
2. COLLECTOR
1
3. EMITTER
Features
High current (max. 500 mA)
Low voltage (max. 30 V).
Pre-amplifiers requiring high input impedance.
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 10 V
IC Collector Current -Continuous 500 mA
PC Collector Power Dissipation 2 W
Tj Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=100A,IE=0 30 V
Collector-emitter breakdown voltage VCE(SUS) Ic=100uA,IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 10 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 A
base cut-off current ICEO VEB=10V,IC=0 0.1 A
hFE(1) VCE=5.0V,IC=10mA 10000
DC current gain
hFE(2) VCE=5.0V,IC=100mA 20000
Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=0.1mA 1.5 V
Base-emitter voltage VBE VCE=5V,Ic=100mA 2 V
Transition frequency fT VCE=5V,IC=10mA,f=100MHz 125 MHz
PZTA14
SOT-223 Transistor(NPN)
Typical Characteristics