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ST13003DN
High voltage fast-switching NPN power transistor
Preliminary data
Features
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Integrated free-wheeling diode
3
Application 1
2
Compact fluorescent lamps (CFLs)
SOT-32
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching Figure 1. Internal schematic diagram
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
Table 1. Device summary
Order code Marking Package Packaging
ST13003DN 13003DN SOT-32 BAG
February 2010 Doc ID 17186 Rev 1 1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8
change without notice.
Electrical ratings ST13003DN
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Collector-base voltage (IC = 0) 9 V
IC Collector current 1 A
ICM Collector peak current (tP < 5 ms) 2 A
IB Base current 0.5 A
IBM Base peak current (tP < 5 ms) 1 A
PTOT Total dissipation at Tc = 25