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Philips Semiconductors Product Specification

PowerMOS transistor BUK555-200A/B
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
logic level field-effect power
transistor in a plastic envelope. BUK555 -200A -200B
The device is intended for use in VDS Drain-source voltage 200 200 V
Switched Mode Power Supplies ID Drain current (DC) 14 13 A
(SMPS), motor control, welding, Ptot Total power dissipation 125 125 W
DC/DC and AC/DC converters, and Tj Junction temperature 175 175