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Philips Semiconductors Product specification

PowerMOS transistor BUK463-100A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a plastic
envelope suitable for surface mount Drain-source voltage 100 V
applications. VDS Drain current (DC) 14 A
The device is intended for use in ID Total power dissipation 75 W
Switched Mode Power Supplies Ptot Junction temperature 175