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S9012
PNP General Purpose Transistors
TO-92
P b Lead(Pb)-Free
1. EMITTER 1
2. BASE 2
3
3. COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -25 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base Voltage VEBO -5 Vdc
Collector Current IC -500 mAdc
Total Device Dissipation TA =25 C PCM 0.625 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -25 - Vdc
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 - Vdc
-
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5 Vdc
Collector Cutoff Current (VCE= -20 Vdc, IB =0) ICE0 -0.1 uAdc
-
Collector Cutoff Current (VCB= -40 Vdc, IE=0) ICBO - -0.1 uAdc
Emitter Cutoff Current (VEB= -5.0V d c, IC =0) IEBO - -0.1 uAdc
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S9012 WE IT R ON
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
On Characteristics
DC Current Gain
(IC= -50 mAdc, VCE= -1Vdc) hFE(1) 64 300 -
(IC= -500 mAdc, VCE= -1Vdc) hFE(2) 40 -
Collector-Emitter Saturation Voltage
VCE(sat) - -0.6 Vdc
(IC= 500 mAdc, IB= -50 mAdc)
Base-Emitter Saturation Voltage
VBE(sat) - -1.2 Vdc
(IC= 500 mAdc, IB= -50 mAdc)
Transition frequency fT - MHz
150
Classification Of h FE(1)
Rank D E F G H I
Range 64-91 78-112 96-135 112-166 144-202 190-300
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Typical Characteristics
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S9012
TO-92 Outline Dimensions unit:mm
E
TO-92
Dim
H
Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
E
L
4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
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