pzt987a.pdf part of Secos pzt987a pzt987a.pdf, . Electronic Components Datasheets Active components Transistors Secos pzt987a.pdf text manual preview

Text preview for : pzt987a.pdf part of Secos pzt987a . Electronic Components Datasheets Active components Transistors Secos pzt987a.pdf

Back to : pzt987a.pdf | Home

PZT987A
PNP Silicon Planar
Elektronische Bauelemente
Medium Power High Gain Transistor
RoHS Compliant Product
SOT-223
Description
The PZT987A is designed for battery
powered circuits and fast charge
converters.

Features
* Gain Of 200 At Ic=2A And Very
Low Saturation Voltage
Millimeter Millimeter
REF. REF.

De
ad
tC
eo
Min. Max. Min. Max.
A 6.70 7.30 B 13 T YP.
C
C 2.90 3.10 J 2.30 REF.

BE
C
9 8 7A D 0.02 0.10 1 6.30 6.70
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
H 0.25 0.35 4 3.30 3.70
5 1.40 1.80
o
MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -25 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -3 A
I CM Collector Current (Pulse) -6 A
PD Total Power Dissipation 2 W
TJ,Tstg Junction and Storage Temperature -55~+150 C
O

*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO -25 - - V I C=-100