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BCP5401
PNP Epitaxial
Elektronische Bauelemente
Planar Transistor
RoHS Compliant Product

SOT-89

Features

Designed for gereral prupose application requiring
high breakdown voltage.

1
2
3

1.BASE
2.COLLECTOR
3.EMITTER

REF. REF.
Min. Max. Min. Max.
A 4.4 4.6 G 3.00 REF.
B 4.05 4.25 H 1.50 REF.
Marking:5401 C 1.50 1.70 I 0.40 0.52
XXXX D 1.30 1.50 J 1.40 1.60
(xxxx = Date Code) E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L 5 q TYP.
M 0.70 REF.

ABSOLUTE MAXIMUM RATINGS (Tamb=25 o C, unless otherwise specified)
Parameter Symbol Value Unit
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Total Power Dissipation PD 1 W
Operating Junction and Storage Temperature TJ,TSTG +150,-55 ~ +150 o
C

ELECTRICAL CHARACTERISTICS (Tamb=25 o C)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO -160 - - V IC=-100