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TIP31/31A/31B/31C
TO-220 Transistor (NPN)
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
Medium Power Linear Switching Applications
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter TIP31 TIP31A TIP31B TIP31C Units
VCBO Collector-Base Voltage 40 60 80 100 V
VCEO Collector-Emitter Voltage 40 60 80 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 2 W
Tj Junction Temperature 150
Tstg Storage Temperature Range -55to+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage TIP31 40
TIP31A 60
V(BR)CBO IC= 1mA, IE=0 V
TIP31B 80
TIP31C 100
Collector-emitter breakdown voltage * TIP31 40
TIP31A 60
V(BR)CEO IC= 30mA, IB=0 V
TIP31B 80
TIP31C 100
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V
Collector cut-off current TIP31 VCB=40V, IE=0
TIP31A VCB=60V, IE=0
ICBO 200 A
TIP31B VCB=80V, IE=0
TIP31C VCB=100V, IE=0
Collector cut-off current TIP31/31A ICEO VCE= 30V, IB= 0
0.3 mA
TIP31B/31C VCE= 60V, IB= 0
Emitter cut-off current IEBO VEB=5V, IC=0 1 mA
hFE(1) VCE= 4V, IC= 1A 25
DC current gain
hFE(2) VCE=4 V, IC= 3A 10 50
Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.375A 1.2 V
Base-emitter voltage VBE(on) VCE= 4V, IC=3A 1.8 V
Transition frequency fT VCE=10V , IC=0.5A 3 MHZ
* Pulse Test: PW300