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STP6NK60Z - STP6NK60ZFP
STB6NK60Z - STB6NK60Z-1
N-CHANNEL 600V - 1 - 6A TO-220/TO-220FP/D2PAK/I2PAK
Zener-Protected SuperMESHTMPower MOSFET
TYPE VDSS RDS(on) ID Pw
STP6NK60Z 600 V < 1.2 6 A 110 W
STP6NK60ZFP 600 V < 1.2 6 A 32 W
STB6NK60Z 600 V < 1.2 6 A 110 W
STB6NK60Z-1 600 V < 1.2 6 A 110 W
3
TYPICAL RDS(on) = 1 1 3
s 2
1
EXTREMELY HIGH dv/dt CAPABILITY 2
s D PAK
TO-220 TO-220FP
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY 3
12
I2PAK
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip- INTERNAL SCHEMATIC DIAGRAM
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
s LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP6NK60Z P6NK60Z TO-220 TUBE
STP6NK60ZFP P6NK60ZFP TO-220FP TUBE
STB6NK60ZT4 B6NK60Z D2PAK TAPE & REEL
STB6NK60Z-1 B6NK60Z I2PAK TUBE
April 2003 1/13
STP6NK60Z - STP6NK60ZFP - STB6NK60Z - STB6NK60Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP6NK60Z
STB6NK60Z STP6NK60ZFP
STB6NK60Z-1
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage