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BC337/338(NPN)
TO-92 Bipolar Transistors

TO-92
1. COLLECTOR

2. BASE

3. EMITTER

Features
Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage BC337 50
V
BC338 30
VCEO Collector-Emitter Voltage BC337 45
V
BC338 25
VEBO Emitter-Base Voltage 5 V Dimensions in inches and (millimeters)

IC Collector Current -Continuous 800 mA
PD Total Device Dissipation 625 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage VCBO IC= 100uA, IE=0
BC337 50 V
BC338 30 V
Collector-emitter breakdown voltage IC= 10mA , IB=0
BC337 VCEO 45 V
BC338 25 V
Emitter-base breakdown voltage VEBO IE= 10uA, IC=0 5 V
Collector cut-off current BC337 ICBO VCB= 45V, IE=0 0.1
uA
BC338 VCB= 25V, IE=0 0.1
Collector cut-off current BC337 VCE= 40V, IB=0 0.2
ICEO uA
BC338 VCE= 20V, IB=0 0.2
Emitter cut-off current IEBO VEB= 4 V, IC=0 0.1 uA
BC337/BC338 100 630
BC337-16/BC338-16 100 250
hFE(1) VCE=1V, IC= 100mA
BC337-25/BC338-25 160 400
BC337-40/BC338-40 250 630
DC current gain hFE(2) VCE=1V, IC= 300mA 60
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.7 V
Base-emitter saturation voltage VBE(sat) IC= 500mA, IB=50mA 1.2 V
Base-emitter voltage VBE VCE=1V, IC= 300mA 1.2 V
VCE= 5V, IC= 10mA
Transition frequency fT 210 MHz
f = 100MHz
VCB=10V,IE=0
Collector Output Capacitance Cob 15 pF
f=1MHZ
BC337/338(NPN)
TO-92 Bipolar Transistors

Typical Characteristics
BC337/338(NPN)
TO-92 Bipolar Transistors