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SEMICONDUCTOR KTC3876S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Excellent hFE Linearity A _
2.93 + 0.20
: hFE(2)=25(Min.) at VCE=6V, IC=400mA. B 1.30+0.20/-0.15
C 1.30 MAX
D
Complementary to KTA1505S. 2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
MAXIMUM RATING (Ta=25 ) M 0.20 MIN
N 1.00+0.20/-0.10
N
CHARACTERISTIC SYMBOL RATING UNIT
C
P 7
J
Collector-Base Voltage VCBO 35 V
K
M
Collector-Emitter Voltage VCEO 30 V
1. EMITTER
Emitter-Base Voltage VEBO 5 V 2. BASE
3. COLLECTOR
Collector Current IC 500 mA
Base Current IB 50 mA
Collector Power Dissipation PC 150 mW SOT-23
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
h FE Rank Lot No.
Type Name
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
hFE(1) VCE=1V, IC=100mA 70 - 400
DC Current Gain (Note)
hFE(2) VCE=6V, IC=400mA 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Voltage VBE VCE=1V, IC=100mA - 0.8 1.0 V
Transition Frequency fT VCE=6V, IC=20mA - 300 - MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
(Note) : hFE(1) Classification O:70 140 Y:120 240 GR:200 400
hFE(2) Classification O:25Min. Y:40Min.
2007. 5. 29 Revision No : 3 1/2
KTC3876S
I C - VCE
(LOW VOLTAGE REGION) h FE - I C
500 500
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
Ta=25 C 300
DC CURRENT GAIN h FE
400 4.0 Ta =100 C VCE =6V
6.0 3.0
Ta =25 C
C
300 2.0 Ta =-25
100
VCE =1V
200 50
1.0
30
100 0.5
I B =0.1mA COMMON EMITTER
0 10
0 1 2 3 4 5 0.5 1 3 10 30 100 300 1K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I B - VBE
COLLECTOR-EMITTER SATURATION
1 2K
COMMON EMITTER COMMON
I C /I B =10 1K EMITTER
BASE CURRENT I B (