Text preview for : buk108-50gs_1.pdf part of Philips buk108-50gs 1 . Electronic Components Datasheets Active components Transistors Philips buk108-50gs_1.pdf
Back to : buk108-50gs_1.pdf | Home
Philips Semiconductors Product specification
PowerMOS transistor BUK108-50GS
TOPFET
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT
overload protected power MOSFET
in a 3 pin plastic surface mount VDS Continuous drain source voltage 50 V
envelope, intended as a general ID Continuous drain current 15 A
purpose switch for automotive PD Total power dissipation 40 W
systems and other applications. Tj Continuous junction temperature 150