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SSG4520H
N-Ch: 6.6A, 20V, RDS(ON) 47 m
P-Ch: -5.2A, -20V, RDS(ON) 79 m
Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET

RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free

DESCRIPTION SOP-8
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low B

RDS(on) and to ensure minimal power loss and heat
dissipation.
L D

FEATURES M

Low RDS(on) provides higher efficiency and A C
extends battery life. N
Low thermal impedance copper leadframe
J K

SOP-8 saves board space
H G F E
Fast switching speed
High performance trench technology Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 5.8 6.20 H 0.35 0.51
B 4.80 5.00 J 0.375 REF.
APPLICATION C 3.80 4.00 K 45