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2SA1048
TO-92S Transistor (PNP)
1. EMITTER
TO-92S
2. COLLECTOR
3. BASE
123
Features
High voltage: VCEO=-50V(Min.)
High hFE: hFE=70~400
Low noise: NF=1dB(Typ.),10dB(Max.)
Complementary to 2SC2458
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous -0.15 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100 A, IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-100 A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50 V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5 V, IC=0 -0.1 A
DC current gain hFE VCE=-6 V, IC=-2mA 70 400
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V
Transition frequency fT VCE=-10 V, IC=-1mA 80 MHz
Collector output capacitance Cob VCB=-10 V, IE=0, f=1 MHz 7 pF
VCE=-6 V, IC=-0.1 mA,
Noise figure NF 10 dB
f=1 KHZ, Rg=10 K
CLASSIFICATION OF hFE
Rank O Y GR
Range 70-140 120-240 200-400
2SA1048
TO-92S Transistor (PNP)
Typical Characteristics