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SUM27N20-78
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES
D TrenchFETr Power MOSFET
PRODUCT SUMMARY D 175_C Junction Temperature
D New Low Thermal Resistance Package
V(BR)DSS (V) rDS(on) (W) ID (A) D PWM Optimized for Fast Switching
200
0.078 @ VGS = 10 V 27
APPLICATIONS
0.083 @ VGS = 6 V 26
D Isolated DC/DC Converters
- Primary-Side Switch
D
TO-263
G
G D S
Top View
SUM27N20-78 S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200
Gate-Source Voltage VGS "20 V
TC = 25_C 27
Continuous Drain Current (TJ = 175_C) ID
TC = 125_C 15.5
A
Pulsed Drain Current IDM 60
Avalanche Current IAR 18
Repetitive Avalanche Energya L = 0.1 mH EAR 16.2 mJ
TC = 25_C 150b
Maximum Power Dissipationa PD W
TA = 25_Cc 3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mount (TO-263)c RthJA 40
_C/W
Junction-to-Case (Drain) RthJC 1.0
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 72108 www.vishay.com
S-31511--Rev. B, 14-Jul-03 1
SUM27N20-78
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 200
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 4
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 160 V, VGS = 0 V 1
Zero Gate Voltage Drain Current
g IDSS VDS = 160 V, VGS = 0 V, TJ = 125_C 50 m
mA
VDS = 160 V, VGS = 0 V, TJ = 175_C 250
On-State Drain Currenta ID(on) VDS w 15 V, VGS = 10 V 60 A
VGS = 10 V, ID = 20 A 0.064 0.078
Drain-Source On-State Resistancea VGS = 10 V, ID = 20 A, TJ = 125_C 0.160 W
rDS( )
DS(on)
VGS = 10 V, ID = 20 A, TJ = 175_C 0.205
Drain-Source on State Resistance VGS = 6 V, ID = 15 A 0.068 0.083 W
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 15 S
Dynamicb
Input Capacitance Ciss 2150
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 215 pF
Reverse Transfer Capacitance Crss 90
Total Gate Chargec Qg 40 60
Gate-Source Chargec Qgs VDS = 100 V, VGS = 10 V, ID = 20 A
, , 11 nC
Gate-Drain Chargec Qgd 14
Gate Resistance RG 2 W
Turn-On Delay Timec td(on) 15 25
Rise Timec tr 35 55
VDD = 100 V, RL = 5 W
ns
Turn-Off Delay Timec td(off) ID ^ 20 A, VGEN = 10 V, RG = 2.5 W 40 60
Fall Timec tf 30 45
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current IS 27
A
Pulsed Current ISM 60
Forward Voltagea VSD IF = 20 A, VGS = 0 V 1.0 1.5 V
Reverse Recovery Time trr 115 170 ns
Peak Reverse Recovery Current IRM(REC) , m
IF = 50 A, di/dt = 100 A/ms 7.5 12 A
Reverse Recovery Charge Qrr 0.43 1.02 mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com Document Number: 72108
2 S-31511--Rev. B, 14-Jul-03
SUM27N20-78
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
60 60
VGS = 10 thru 7 V 6V
50 50
I D - Drain Current (A)
I D - Drain Current (A)
40 40
30 30
20 5V 20
TC = 125_C
10 10 25_C
3 V, 4 V - 55_C
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
80 0.16
TC = - 55_C
r DS(on) - On-Resistance ( W )
60 25_C 0.12
g fs - Transconductance (S)
125_C
40 0.08 VGS = 6 V
VGS = 10 V
20 0.04
0 0.00
0 10 20 30 40 50 60 0 10 20 30 40 50 60
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
3000 20
2500 VDS = 100 V
V GS - Gate-to-Source Voltage (V)
16 ID = 20 A
Ciss
C - Capacitance (pF)
2000
12
1500
8
1000
Crss 4
500
Coss
0 0
0 40 80 120 160 200 0 10 20 30 40 50 60
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 72108 www.vishay.com
S-31511--Rev. B, 14-Jul-03 3
SUM27N20-78
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
3.0 100
VGS = 10 V
ID = 20 A
2.5
r DS(on) - On-Resistance (W)
I S - Source Current (A)
2.0
(Normalized)
TJ = 150_C TJ = 25_C
1.5 10
1.0
0.5
0.0 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 260
ID = 1.0 mA
100 240
(BR)DSS (V)
I Dav (a)
IAV (A) @ TA = 25_C
10 220
V
1 200
IAV (A) @ TA = 150_C
0.1 180
- 50 - 25 0 25 50 75 100 125 150 175
0.00001 0.0001 0.001 0.01 0.1 1
tin (Sec) TJ - Junction Temperature (_C)
www.vishay.com Document Number: 72108
4 S-31511--Rev. B, 14-Jul-03
SUM27N20-78
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
30 100
10 ms
Limited by rDS(on)
25
100 ms
I D - Drain Current (A)
I D - Drain Current (A)
20 10
15
1 ms
10 ms
10 1
100 ms, dc
TC = 25_C
5 Single Pulse
0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100 1000
TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1
Square Wave Pulse Duration (sec)
Document Number: 72108 www.vishay.com
S-31511--Rev. B, 14-Jul-03 5
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1