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BUR50S
HIGH CURRENT NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
1
DESCRIPTION 2
The BUR50S is a silicon multiepitaxial planar
NPN transistors in JEDEC TO-3 metal case,
intented for use in switching and linear TO-3
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) 200 V
V CEO Collector-Emitter Voltage (I B = 0) 125 V
V EBO Emitter-Base Voltage (I C = 0) 10 V
IC Collector Current 70 A
I CM Collector Peak Current (t p = 10 ms) 100 A
IB Base Current 20 A
o
P tot Total Dissipation at T c 25 C 350 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
June 1997 1/4
BUR50S
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 200 V 0.2 mA
Current (I E = 0) V CB = 200 V 2 mA
T case = 125 o C
I CEO Collector Cut-off V CE = 125 V 1 mA
Current (I B = 0)
I EBO Emitter Cut-off Current V EB = 7 V 0.2