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SEMICONDUCTOR KRC231M~KRC235M
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
INTERFACE CIRCUIT AND DRIVER B
CIRCUIT APPLICATION.
A
DIM MILLIMETERS
FEATURES O
F
A 3.20 MAX
H M B 4.30 MAX
With Built-in Bias Resistors.
C 0.55 MAX
Simplify Circuit Design.
G
D _
2.40 + 0.15
E 1.27
Reduce a Quantity of Parts and Manufacturing Process. F 2.30
C _
G 14.00+ 0.50
H 0.60 MAX
J 1.05
E E
K 1.45
L 25
J
M 0.80
D
K
1 2 3 N N 0.55 MAX
EQUIVALENT CIRCUIT O 0.75
L
1. EMITTER
C 2. COLLECTOR
3. BASE
R1
B
TO-92M
E
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 600 mA
Collector Power Dissipation PC 400 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2008. 11. 20 Revision No : 2 1/3
KRC231M~KRC235M
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage BVCEO IC=1mA 15 - - V
Collector-Base Breakdown Voltage BVCBO IC=50 A 30 - - V
Emitter-Base Breakdown Voltage BVEBO IE=50 A 5.0 - - V
Collector Cut-off Current ICBO VCB=30V - - 0.5 A
Collector-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=2.5mA - 40 80 mV
DC Current Gain hFE VCE=5V, IC=50mA 200 350 800 -
KRC231M 1.54 2.2 2.86
KRC232M 3.92 5.6 7.28
Input Resistor KRC233M R1 7 10 13 k
KRC234M 3.29 4.7 6.11
KRC235M 4.76 6.8 8.84
Transition Frequency fT * VCE=10V, IE=-50mA, f=100MHz - 200 - MHz
On Resistance Ron f=1kHz, IB=1mA, VIN=0.3V - 0.6 -
Note : * Characteristic of Transistor Only.
2008. 11. 20 Revision No : 2 2/3
KRC231M~KRC235M
2008. 11. 20 Revision No : 2 3/3