buk7615-100a_1.pdf part of Philips buk7615-100a 1 buk7615-100a_1.pdf, . Electronic Components Datasheets Active components Transistors Philips buk7615-100a

Text preview for : buk7615-100a_1.pdf part of Philips buk7615-100a 1 . Electronic Components Datasheets Active components Transistors Philips buk7615-100a_1.pdf

Back to : buk7615-100a_1.pdf | Home

Philips Semiconductors Product specification

TrenchMOSTM transistor BUK7615-100A
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 100 V
suitable for surface mounting. Using ID Drain current (DC) 75 A
'trench' technology the device Ptot Total power dissipation 230 W
features very low on-state Tj Junction temperature 175